C3365 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

C3365

Silicon NPN Triple Diffused

Renesas Electronics 

2SC3365

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

IB

PC * 1

Tj

Tstg

Ratings

Unit

500

V

400

V

10

V

10

A

20

A

5

A

80

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to emitter sustain

voltage

Symbol Min

VCEO(sus)

VCEX(sus)

400

400

Typ

—

—

Emitter to base breakdown

V(BR)EBO

10

—

voltage

Collector cutoff current

I CBO

—

—

I CEO

—

—

DC current transfer ratio

hFE1

12

—

hFE2

5

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test

t on

—

—

t stg

—

—

tf

—

—

Max Unit

—

V

—

V

—

V

50

µA

50

µA

—

—

1.0 V

1.5 V

1.0 µs

2.5 µs

1.0 µs

Test conditions

IC = 0.2 A, RBE = ∞, L = 100 mH

IC = 10 A, IB1 = 2 A, IB2 = –0.6 A,

VBE = –5.0 V, L = 180 µH,

Clamped

IE = 10 mA, IC = 0

VCB = 400 V, IE = 0

VCE = 350 V, RBE = ∞

VCE = 5.0 V, IC = 5 A*1

VCE = 5.0 V, IC = 10 A*1

IC = 5 A, IB = 1 A*1

IC = 10 A, IB1 = –IB2 = 2 A,

VCC ≅ 150 V

Share Link: