2SC3356-B-AE3-R 查看數據表（PDF） - Unisonic Technologies
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2SC3356-B-AE3-R Datasheet PDF : 4 Pages
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2SC3356
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
BVCBO
20
V
Collector to Emitter Voltage
BVCEO
12
V
Emitter to Base Voltage
BVEBO
3
V
Collector Current
IC
100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-65~ +150
°С
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
CRE
NF
TEST CONDITIONS
VCB =10 V,IE =0
VEB =1 V, IC=0
VCE =10 V, IC =20 mA
VCE =10 V, IC =20 mA
VCB =10 V, IE =0, f =1.0MHz
VCE =10 V, IC =7mA, f =1.0GHz
CLASSIFICATION OF hFE
RANK
RANGE
A
50-160
B
160-240
MIN TYP MAX UNIT
1.0 μA
1.0 μA
50
300
7
GHz
1.0 pF
2.0 dB
C
240-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-024,D
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