2SC3325 查看數據表（PDF） - Toshiba

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2SC3325

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = 50 V, IE = 0

IEBO

VEB = 5 V, IC = 0

hFE (1)

VCE = 1 V, IC = 100 mA

(Note)

hFE (2)

VCE = 6 V, IC = 400 mA

(Note)

VCE (sat)

VBE

fT

Cob

IC = 100 mA, IB = 10 mA

VCE = 1 V, IC = 100 mA

VCE = 6 V, IC = 20 mA

VCB = 6 V, IE = 0, f = 1 MHz

Note: hFE (1) classification O: 70~140, Y: 120~240

hFE (2) classification O: 25 (min), Y: 40 (min)

2SC3325

Min Typ. Max Unit

⎯

⎯

0.1

μA

⎯

⎯

0.1

μA

70

⎯

240

25

⎯

⎯

⎯

0.1 0.25

V

⎯

0.8

1.0

V

⎯ 300 ⎯ MHz

⎯

7

⎯

pF

2

2007-11-01

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