2SC2794 查看數據表（PDF） - Inchange Semiconductor
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2SC2794 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=2V
hFE-2
DC current gain
IC=1A ; VCE=2V
fT
Transition frequency
IC=100mA; VCE=5V
Product Specification
2SC2794
MIN TYP. MAX UNIT
60
V
0.6
V
1.3
V
100 μA
1
mA
50
25
40
MHz
2
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