2SC2793 查看數據表（PDF） - Inchange Semiconductor

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2SC2793

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

VCE(sat) Collector-emitter saturation voltage IC=3 A;IB=0.6 A

VBE(sat) Base-emitter saturation voltage

IC=3 A;IB=0.6 A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=10mA ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

Switching times

tr

Rise time

tstg

Storage time

tf

Fall time

VCC=400V ,IC=3A,

IB1=0.3A;IB2=-0.8A

Product Specification

2SC2793

MIN TYP. MAX UNIT

800

V

900

V

1.0

V

1.5

V

100 μA

1

mA

10

10

1.0 μs

3.5 μs

1.0 μs

2

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