2SC2334-M 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC2334-M Datasheet PDF : 4 Pages
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=5.0A ,IB=0.5A,L=1mH
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=100V; IE=0
VCE=100V; VBE(off)=-1.5V
Ta=125℃
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
hFE-3
DC current gain
IC=5A ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5.0A IB1=-IB2=0.5A
RL=10Ω;VCC≈50V
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
www.jmnic.com
2SC2334
MIN TYP. MAX UNIT
100
V
0.6
V
1.5
V
10
μA
10
μA
1.0
mA
10
μA
40
40
200
20
0.5
μs
1.5
μs
0.5
μs
JMnic
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