2SC1115 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

生产厂家

2SC1115

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1115

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.5A

ICBO

Collector cut-off current

VCB=140V; IE=0

IEBO

Emitter cut-off current

hFE

DC current gain

VEB=5V; IC=0

IC=3A ; VCE=4V

fT

Transition frequency

IC=1A ; VCE=12V

MIN TYP. MAX UNIT

80

V

5

V

1.5

V

2.0

V

0.1 mA

0.1 mA

30

150

10

MHz

2

Share Link: