2SB554 查看數據表（PDF） - Inchange Semiconductor
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2SB554 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB554
DESCRIPTION
·With TO-3 package
·Complement to type 2SD424
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
固I电NC半H导A体NGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-180
-5
-15
UNIT
V
V
V
A
IB
Base current
-4
A
PC
Collector power dissipation
TC=25℃
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~200
℃
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