Philips Semiconductors
2.5GHz low voltage fractional-N dual frequency
synthesizer
Product specification
SA8026
Limiting values
SYMBOL
PARAMETER
VDD
VDDCP
∆VDDCP–VDD
Vn
Vn
∆VGND
Digital supply voltage
Analog supply voltage
Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD)
Voltage at pins 1, 2, 5, 6, 12, 15 to 20
Voltage at pin 8, 9, 11
Difference in voltage between GNDCP and GND (these pins should be
connected together)
Tstg
Tamb
Tj
Storage temperature
Operating ambient temperature
Maximum junction temperature
MIN.
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–55
–40
MAX.
+5.5
+5.5
+2.8
VDD + 0.3
VDDCP + 0.3
+0.3
UNIT
V
V
V
V
V
V
+125
_C
+85
_C
150
_C
Handling
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal
precautions appropriate to handling MOS devices.
Thermal characteristics
SYMBOL
PARAMETER
Rth j–a
Thermal resistance from junction to ambient in free air
VALUE
135
UNIT
K/W
1999 Nov 04
4