2SA837 查看數據表（PDF） - Inchange Semiconductor
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2SA837 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA837
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1667
APPLICATIONS
·For radio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=75℃
VALUE
-90
-90
-5
-4
50
150
-55~150
UNIT
V
V
V
A
W
℃
℃
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