2SA1383 查看數據表（PDF） - Inchange Semiconductor

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2SA1383

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA

VBEsat Base-emitter saturation voltage

IC=-50mA; IB=-5mA

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-1mA ; VCE=-5V

hFE-2

DC current gain

IC=-10mA ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-20mA ; VCE=-10V

‹ hFE-2 Classifications

Q

P

100-200

160-320

Product Specification

2SA1383

MIN TYP. MAX UNIT

-180

V

-0.5

V

-1.5

V

-1.0 μA

-1.0 μA

90

100

320

4.5

pF

180

MHz

2

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