2SA1142 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SA1142 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA
VBEsat Base-emitter saturation voltage
IC=-50mA; IB=-5mA
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-1mA ; VCE=-5V
hFE-2
DC current gain
IC=-10mA ; VCE=-5V
fT
Transition frequency
IC=-20mA ; VCE=-10V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
hFE-2 Classifications
O
Y
100-200
160-320
Product Specification
2SA1142
MIN TYP. MAX UNIT
-0.16 -0.5
V
-0.8 -1.5
V
-1
μA
-1
μA
90 200
100 200 320
180
MHz
4.5
pF
2
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