2N7002F 查看數據表（PDF） - Philips Electronics

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2N7002F

N-channel TrenchMOS FET

Philips Electronics 

2N7002F

N-channel TrenchMOS FET

Rev. 03 — 28 April 2006

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

TrenchMOS technology.

1.2 Features

s Logic level threshold compatible

s Surface-mounted package

s Very fast switching

s TrenchMOS technology

1.3 Applications

s Logic level translator

s High-speed line driver

1.4 Quick reference data

s VDS ≤ 60 V

s RDSon ≤ 2 Ω

s ID ≤ 475 mA

s Ptot ≤ 0.83 W

2. Pinning information

Table 1: Pinning

Pin

Description

1

gate (G)

2

source (S)

3

drain (D)

Simplified outline

3

1

2

SOT23

Symbol

D

G

mbb076 S

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