2N6373 查看數據表（PDF） - Quanzhou Jinmei Electronic

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生产厂家

2N6373

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2N6372 2N6373 2N6374

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6372

2N6373 IC=0.1A ;IB=0

2N6374

VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.2A

VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A

VBEsat-1 Base-emitter saturation voltage

IC=2A; IB=0.2A

VBEsat-2 Base-emitter saturation voltage

IC=6A; IB=0.6A

2N6372 VCE=80V; IB=0

ICEO

Collector cut-off current 2N6373 VCE=60V; IB=0

2N6374 VCE=40V; IB=0

ICBO

Collector cut-off current

VCB=Rated VCB; IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

2N6372 IC=2A ; VCE=2V

hFE

DC current gain

2N6373 IC=2.5A ; VCE=2V

2N6374 IC=3A ; VCE=2V

fT

Transition frequency

IC=0.5A;VCE=10V;f=1MHz

MIN TYP. MAX UNIT

80

60

V

40

0.7

V

1.2

V

1.2

V

2.0

V

0.1 mA

10 μA

0.1 mA

20

100

4

MHz

2

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