2N6270 查看數據表（PDF） - Inchange Semiconductor
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2N6270 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6270 2N6271
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6270
2N6271
IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=0.75A
VBEsat Base-emitter saturation voltage
IC=7.5A ;IB=0.75A
ICEO
Collector cut-off current
VCE=1/2RatedVCE; IB=0
ICEV
Collector cut-off current
VCE=RatedVCE; VBE(off)=1.5V
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=15A ; VCE=4V
fT
Trainsistion frequency
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
80
V
100
1.0
V
1.3
V
5.0 mA
1.0 mA
1.0 mA
20
100
75
MHz
2
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