2N5469 查看數據表（PDF） - Inchange Semiconductor

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2N5469

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5468 2N5469

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

ICEV

Collector cut-off current

IEBO

Emitter cut-off current

VCB=ratedVCBO; IE=0

VCE=ratedVCEO;VBE(off)=1.5V

TC=125℃

VEB=5V; IC=0

hFE

DC current gain

IC=3A ; VCE=5V

fT

Trainsistion frequency

IC=1A ; VCE=10V;f=1MHz

MIN TYP. MAX UNIT

400

V

2.0

V

2.0

V

1.0 mA

1.0

5.0

mA

1.0 mA

15

60

2.5

MHz

2

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