2N4915 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N4915 Datasheet PDF : 3 Pages
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SILICON EPITAXIAL
NPN TRANSISTOR
2N4915
• Low Collector Saturation Voltage.
• Hermetic TO3 Metal Package.
• Designed For General Purpose, Switching
and Power Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
80V
VCEO
Collector – Emitter Voltage
80V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
5A
IB
Base Current
1.0A
PD
Total Power Dissipation at TC = 25°C
87.5W
Derate Above 25°C
0.5W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
2
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8302
Website: http://www.semelab-tt.com
Issue 1
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