2N2218AL 查看數據表（PDF） - Semicoa Semiconductor
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2N2218AL Datasheet PDF : 2 Pages
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Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2218ALJ)
• JANTX level (2N2218ALJX)
• JANTXV level (2N2218ALJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
2N2218AL
Silicon NPN Transistor
Data Sheet
Applications
• General purpose
• Low power
• NPN silicon transistor
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate above 25OC
Power Dissipation, TC = 25OC
Derate above 25OC
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
TJ
TSTG
Features
• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 0400
• Reference document:
MIL-PRF-19500/251
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
50
Volts
75
Volts
6
Volts
800
mA
0.8
W
4.6
mW/°C
3.0
W
17.0
mW/°C
-55 to +200
°C
-55 to +200
°C
Copyright 2002
Rev. K
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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