1N65AG(2011) 查看數據表（PDF） - Unisonic Technologies
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1N65AG Datasheet PDF : 8 Pages
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1N65A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulse(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
EAS
EAR
dv/dt
650
±30
0.5
2
50
3.6
4.0
4.5
V
V
A
A
mJ
mJ
V/ns
Power Dissipation (TC=25°C)
Derate above 25°C
3
W
PD
25
mW/°C
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
120
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-584.B
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