10MQ060NPBF 查看數據表（PDF） - Vishay Semiconductors

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10MQ060NPBF

SCHOTTKY RECTIFIER

Vishay Semiconductors 

10MQ060NPbF

Vishay High Power Products Schottky Rectifier, 2.1 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Threshold voltage

Forward slope resistance

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

VF(TO)

rt

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

1A

1.5 A

1A

1.5 A

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

TJ = TJ maximum

VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.63

0.71

0.57

0.63

0.5

7.5

0.45

86.8

31

2.0

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Approximate weight

Marking device

Case style SMA (similar D-64)

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 55 to 150

UNITS

°C

80

°C/W

0.07

g

0.002

oz.

V1H

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94118

Revision: 16-Apr-08

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