2SD718 查看數據表（PDF） - Unisonic Technologies

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2SD718

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER

APPLICATION

FEATURES

*Recommended for 45~50W Audio Frequency

*Amplifier Output Stage.

*Complementary to 2SB688.

1

TO-3P

1: BASE 2:COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

Ic

IB

Pc

Tj

Tstg

RATINGS

120

120

5

10

1

80

150

-55 ~150

UNIT

V

V

V

A

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))

PARAMETER

SYMBOL

TEST CONDITION

MIN

Collector-Emitter Breakdown Voltage V(BR)CEO Ic=50mA,IB=0

120

Collector Cut-off Current

ICBO

VCB=120V,IE=0

Emitter Cut-off Current

IEBO

VEB=5V,Ic=0

DC Current Gain

HFE

VCE=5V,Ic=1A

55

Collector-Emitter Saturation Voltage VCE(sat) Ic=6A,IB=0.6A

Base-Emitter Voltage

VBE

VCE=5V,Ic=5A

Transition Frequency

fT

VCE=5V,Ic=1A

Collector Output Capacitance

Cob

VCB=10V,IE=0, f=1MHz

TYP

12

170

MAX

10

10

160

2.0

1.5

UNIT

V

μA

μA

V

V

MHz

pF

CLASSIFICATION OF hFE

RANK

RANGE

R

55-110

O

80-160

UTC UNISONIC TECHNOLOGIES CO., LTD. 1

QW-R214-003,A

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