MT29F8G08ADBDAH4ES 查看數據表（PDF） - Micron Technology

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MT29F8G08ADBDAH4ES

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Micron Technology 

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4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Asynchronous Interface Timing Diagrams

Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled

R/B#

tR_ECC

tPROG_ECC

I/O[7:0]

00h

Address

(5 cycles)

35h

70h Status 00h

DOUT

85h

Address

(5 cycles)

Data 85h

Address

(2 cycles)

Data 10h

70h

Source address

SR bit 0 = 0 READ successful

SR bit 1 = 0 READ error

DOUT is optional

Destination address

Column address 1, 2

(Unlimitted repetitions are possible)

Figure 100: ERASE BLOCK Operation

CLE

CE#

WE#

ALE

RE#

I/O[7:0]

RDY

tWC

tWB

60h

Row Row Row

add 1 add 2 add 3

D0h

Row address

tBERS

Busy

tWHR

70h

READ STATUS

command

Status

I/O0 = 0, Pass

I/O0 = 1, Fail

Don’t Care

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

130

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2009 Micron Technology, Inc. All rights reserved.

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