BFQ17 查看數據表（PDF） - Philips Electronics

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BFQ17

NPN 1 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 1 GHz wideband transistor

Product specification

BFQ17

DESCRIPTION

NPN transistor in a SOT89 plastic

envelope intended for application in

thick and thin-film circuits. The

transistor has extremely good

intermodulation properties and a high

power gain.

PINNING

PIN

DESCRIPTION

Code: FA

1 emitter

2 collector

3 base

page

1

2

3

Bottom view

MBK514

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

ICM

Ptot

fT

collector-base voltage

collector-emitter voltage

peak collector current

total power dissipation

transition frequency

Cre

feedback capacitance

CONDITIONS

TYP. MAX. UNIT

open emitter

open base

− 40 V

− 25 V

− 300 mA

up to Ts = 145 °C (note 1)

−1

IC = 150 mA; VCE = 15 V; f = 500 MHz; 1.5 −

Tj = 25 °C

IC = 10 mA; VCE = 15 V; f = 1 MHz;

Tamb = 25 °C

1.9 −

W

GHz

pF

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCER

VCEO

VEBO

IC

ICM

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

DC collector current

peak collector current

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

RBE ≤ 50 Ω

open base

open collector

f > 1 MHz

up to Ts = 145 °C (note 1)

Note

1. Ts is the temperature at the soldering point of the collector tab.

MIN. MAX. UNIT

−

40

V

−

40

V

−

25

V

−

2

V

−

150 mA

−

300 mA

−

1

W

−65 150 °C

−

175 °C

September 1995

2

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