K2570 查看數據表（PDF） - Renesas Electronics

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K2570

Silicon N-Channel MOS FET Low Frequency Power Switching

Renesas Electronics 

2SK2570

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Channel dissipation

Channel temperature

Storage temperature

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

Pch

Tch

Tstg

Item

Drain to source breakdown voltage

Gate to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Notes: 2. Pulse test

Symbol

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

RDS(on)

|yfs|

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Min

20

±10

—

—

0.5

—

—

0.22

—

—

—

—

—

—

—

Typ

—

—

—

—

—

0.8

1.3

0.35

45

33

9.6

20

60

240

140

Ratings

20

±10

0.2

0.4

150

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

mW

°C

°C

Max

—

—

1.0

±5.0

1.5

1.1

2.2

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

(Ta = 25°C)

Test Conditions

ID = 10 µA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = 20 V, VGS = 0

VGS = ±6.5 V, VDS = 0

ID = 10 µA, VDS = 5 V

ID = 100 mA, VGS = 4 V *2

ID = 40 mA, VGS = 2.5 V *2

ID = 100 mA, VDS = 10 V *2

VDS = 10 V, VGS = 0,

f = 1 MHz

VGS = 5 V, ID = 100 mA,

RL = 100 Ω

Rev.2.00 Sep 07, 2005 page 2 of 6

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