BT131-600/DG,116(2015) 查看數據表（PDF） - NXP Semiconductors.
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BT131-600/DG,116 Datasheet PDF : 14 Pages
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NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 51.2 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
dIT/dt
rate of rise of on-state current IG = 6 mA; T2+ G+
IG = 6 mA; T2+ G-
IG = 14 mA; T2- G+
IG = 6 mA; T2- G-
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
1.2
IT(RMS)
(A)
0.8
003aab039
51.2 °C
3
IT(RMS)
(A)
2
BT131-600
4Q Triac
Min Max Unit
-
600 V
-
1
A
-
12.5 A
-
13.7 A
-
0.78 A2s
-
50
A/µs
-
50
A/µs
-
10
A/µs
-
50
A/µs
-
2
A
-
5
W
-
0.1 W
-40 150 °C
-
125 °C
003aab042
0.4
1
0
- 50
0
50
Tlead = 51.2 °C
100
150
Tlead (°C)
Fig. 1. RMS on-state current as a function of lead
temperature; maximum values
0
10- 2
10- 1
1
10
surge duration (s)
f = 50 Hz; Tlead = 51.2 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT131-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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