BLV21 查看數據表（PDF） - Philips Electronics

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BLV21

VHF power transistor / N-P-N silicon planar epitaxial transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

Product specification

BLV21

25

handbook, halfpage

PL

(W)

20

15

10

5

0

0

Th = 25 °C

70 °C

MGP288

1

PS (W)

2

Fig.9 Typical values; VCE = 28 V; f = 175 MHz.

handbook,1h5alfpage

Gp Gp

(dB)

10

η

5

Th = 25 °C

70 °C

Th = 25 °C

70 °C

MGP289

100

η

(%)

50

0

0

5

10

15

20

25

PL (W)

Fig.10 Typical values; VCE = 28 V; f = 175 MHz.

handbook,2h0alfpage

PLnom

(W)

(VSWR = 1)

15

MGP290

Th = 50 °C

70 °C

90 °C

The graph shows the permissible output power under

10

1

nominal conditions (VSWR = 1) as a function of the

expected VSWR during short-time mismatch conditions

with heatsink temperatures as parameter.

10

VSWR

102

Fig.11 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W

August 1986

8

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