BLV21 查看數據表（PDF） - Philips Electronics

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BLV21

VHF power transistor / N-P-N silicon planar epitaxial transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

Product specification

BLV21

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C

f (MHz)

175

VCE (V)

28

PL (W)

15

PS (W)

< 1,5

GP (dB)

> 10

IC (A)

< 0,83

η (%)

> 65

zi (Ω)

1,4 + j1,85

YL (mS)

33 − j27,5

handbook, full pagewidth

C1

50 Ω

L1

C2

L2

L3

T.U.T.

C3

L4

L5

C4

L7 C6

C5 R1

50 Ω

C7

L6

+VCC

Fig.7 Test circuit; c.w. class-B.

MGP253

List of components:

C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)

C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)

C3 = 27 pF ceramic capacitor (500 V)

C4 = 120 pF ceramic capacitor (500 V)

C5 = 100 nF polyester capacitor

L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2 × 5 mm

L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm

L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L4 = L5 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor

L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2 × 5 mm

L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2 × 5 mm

L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,

thickness 1/16".

R1 = R2 = 10 Ω carbon resistor

Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.

August 1986

6

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