Philips Semiconductors
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLV21
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit
MODE OF OPERATION VCE
f
PL
Gp
η
V
MHz
W
dB
%
c.w.
28
175
15
> 10
> 65
zI
Ω
1,4 + j1,85
YL
mS
33 − j27,5
PIN CONFIGURATION
handbook, halfpage
1
4
PINNING
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
2
3
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2