74LVC1G11GF 查看數據表（PDF） - NXP Semiconductors.
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74LVC1G11GF Datasheet PDF : 17 Pages
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NXP Semiconductors
74LVC1G11
Single 3-input AND gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8.
Symbol Parameter
Conditions
40 C to +85 C
Min Typ[1] Max
tpd
propagation delay A, B and C to Y; see Figure 7 [2]
VCC = 1.65 V to 1.95 V
1.5
4.7 17.2
VCC = 2.3 V to 2.7 V
1.0
3.0
6.2
VCC = 2.7 V
1.0
3.0
6.0
VCC = 3.0 V to 3.6 V
1.0
2.6
4.9
VCC = 4.5 V to 5.5 V
1.0
1.9
3.5
CPD
power dissipation VI = GND to VCC; VCC = 3.3 V [3]
-
13
-
capacitance
40 C to +125 C Unit
Min
Max
1.5
21.5 ns
1.0
7.8 ns
1.0
7.5 ns
1.0
6.2 ns
1.0
4.4 ns
-
- pF
[1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
12. Waveforms
VI
A, B, C
input
GND
VOH
Y output
VOL
VM
tPHL
VM
tPLH
001aac031
Fig 7.
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
The input (A, B, C) to output (Y) propagation delays
74LVC1G11
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 4 July 2012
© NXP B.V. 2012. All rights reserved.
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