MBR60100CT 查看數據表（PDF） - Vishay Semiconductors
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MBR60100CT Datasheet PDF : 4 Pages
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MBR60100CT
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
10 000
1000
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100 000
1
10 000
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.398 (10.10)
0.055 (1.40) 0.382 (9.70)
0.047 (1.20) 0.343 (8.70)
TYP.
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.067 (1.70)
TYP.
0.118 (3.00)
TYP.
0.331(8.40)
TYP.
PIN
123
0.634 (16.10)
0.618 (15.70)
0.154 (3.90)
0.138 (3.50)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.638 (16.20)
0.598 (15.20)
0.102 (2.60)
0.087 (2.20)
Revision: 17-Aug-15
3
Document Number: 88892
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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