IPB60R199CP(2006) 查看數據表（PDF） - Infineon Technologies
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IPB60R199CP Datasheet PDF : 10 Pages
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9 Typ. gate charge
V GS=f(Q gate); I D=9.9 A pulsed
parameter: V DD
10
9
120 V
8
7
400 V
6
5
4
3
2
1
0
0
10
20
30
Q gate [nC]
11 Avalanche energy
E AS=f(T j); I D=6.6 A; V DD=50 V
500
IPB60R199CP
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
25 °C, 98%
150 °C, 98%
25 °C
101
150 °C
100
10-1
40
0
0.5
1
1.5
2
V SD [V]
12 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=0.25 mA
700
400
660
300
620
200
580
100
0
20
Rev. 2.0
60
100
140
T j [°C]
540
180
-60
-20
20
60
100 140 180
T j [°C]
page 6
2006-06-19
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