2N708 查看數據表（PDF） - Microsemi Corporation
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2N708 Datasheet PDF : 2 Pages
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NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/312
Devices
2N708
TECHNICAL DATA
Qualified Level
JAN, JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
Operating & Storage Junction Temperature Range
1) Derate linearly 2.06 mW/0C for TA > 250C
2) Derate linearly 6.90 mW/0C for TC > 250C
Symbol
VCEO
VCBO
VEBO
VCER
PT
Top, Tstg
Value
15
40
5.0
20
0.36
1.2
-65 to +200
Units
Vdc
Vdc
Vdc
Vdc
W
W
0C
TO-18 (TO-206AA)*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 1.0 µAdc
Emitter-Base Breakdown Voltage
IE = 10 µAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE ≤ 10 Ω
Collector-Base Cutoff Current
VCB = 20 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
V(BR)CBO
V(BR)EBO
V(BR)CEO
V(BR)CER
ICBO
IEBO
Min. Max.
Unit
Vdc
40
Vdc
5.0
Vdc
15
Vdc
20
25
ηAdc
80
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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