UPD16804GS 查看數據表（PDF） - NEC => Renesas Technology

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UPD16804GS

MONOLITHIC H BRIDGE DRIVER CIRCUIT

NEC => Renesas Technology 

DC-DC

convertor

Battery

VM = 0.5 V to 7.5 V

VDD = 3.0 V to 6.0 V

R1 = 50 Ω Note 2

C1 = C2 = C3 = 10 nF

C1

C2

C3

STBY 14

VDD

5

OSC

circuit

2 3 16 1

15

Charge pump circuit

VM

10

CPU

INC 8

IN1 6

IN2 7

Pull-down resistor

50 kΩ TYP.

Control circuit

Level shift

circuit

D MOS FET

H bridge

circuit

9

DGND

12

PGND

4

VM

C4 Note 1

1 to 10 µ F

11 OUT1

13

OUT2

M

Film

take-up motor

IN1 L

IN2 L

H

H

Forward Brake

mode

mode

Reverse

mode

Stop mode

Notes 1. It is recommended to connect a capacitor of 1 to

10 µF between VM and GND to protect the gate of

the DMOS FET from surge voltage.

2. Insert a resistor of 50 (±10) Ω to prevent malfunc-

tioning.

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