SH8M2 查看數據表（PDF） - ROHM Semiconductor
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SH8M2 Datasheet PDF : 4 Pages
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4V Drive Nch+Pch MOSFET
SH8M2
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small surface mount package (SOP8).
Application
Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8M2
Taping
TB
2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Inner circuit
(8)
(7) (6)
(5)
Limits
Tr1 : N-ch Tr2 : P-ch
30
−30
±20
±20
±3.5
±3.5
±14
±14
1.6
−1.6
14
−14
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
°C
°C
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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