S20S30(2001) 查看數據表（PDF） - Infineon Technologies

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产品描述 (功能)

生产厂家

S20S30
(Rev.:2001)

Silicon Carbide Schottky Diode

Infineon Technologies 

Preliminary data

SDP20S30

SDB20S30

Electrical Characteristics,at Tj = 25 °C, unless otherwise specified (per leg)

Parameter

Symbol

Values

min. typ. max.

AC Characteristics

Total capacitive charge1)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Switching time2)

VR=200V, IF=10A, diF/dt=-200A/µs, Tj=150°C

Total capacitance

Qc

-

23

-

trr

-

n.a.

-

C

VR=0V, TC=25°C, f=1MHz

VR=150V, TC=25°C, f=1MHz

VR=300V, TC=25°C, f=1MHz

-

600

-

-

55

-

-

40

-

Unit

nC

ns

pF

Page 3

2001-09-07

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