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R6010ANX 查看數據表(PDF) - ROHM Semiconductor

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产品描述 (功能)
生产厂家
R6010ANX
ROHM
ROHM Semiconductor 
R6010ANX Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
R6010ANX
 
Data Sheet
Fig.13 Reverse Recovery Time vs. Source Current
1000
Ta=25°C
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1
10
100
Source Current : IS [A]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Rth(ch-a)=52.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01
0.1
1
10
Pulse width : Pw (s)
100 1000
Fig.14 Maximum Safe Operating Area
100
10
Operation in this area
is limited by RDS(on)
(VGS = 10V)
1
0.1
Ta=25°C
Single Pulse
0.01
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
PW = 100μs
PW = 1ms
PW = 10ms
1000
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A

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