MT47H128M8JN-3LHTR 查看數據表（PDF） - Micron Technology

零件编号

产品描述 (功能)

生产厂家

MT47H128M8JN-3LHTR

1Gb: x4, x8, x16 DDR2 SDRAM

Micron Technology 

1Gb: x4, x8, x16 DDR2 SDRAM

Electrical Specifications – Absolute Ratings

Electrical Specifications – Absolute Ratings

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only, and functional operation of the device at these or any other condi-

tions outside those indicated in the operational sections of this specification is not im-

plied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Table 5: Absolute Maximum DC Ratings

Parameter

Symbol

Min

Max

Units

Notes

VDD supply voltage relative to VSS

VDDQ supply voltage relative to VSSQ

VDD

–1.0

2.3

V

1

VDDQ

–0.5

2.3

V

1, 2

VDDL supply voltage relative to VSSL

VDDL

–0.5

2.3

V

1

Voltage on any ball relative to VSS

VIN, VOUT

–0.5

2.3

V

3

Input leakage current; any input 0V ≤ VIN ≤ VDD; all other

II

–5

5

µA

balls not under test = 0V

Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT dis-

IOZ

–5

5

µA

abled

VREF leakage current; VREF = Valid VREF level

IVREF

–2

2

µA

Notes:

1. VDD, VDDQ, and VDDL must be within 300mV of each other at all times; this is not re-

quired when power is ramping down.

2. VREF ≤ 0.6 × VDDQ; however, VREF may be ≥ VDDQ provided that VREF ≤ 300mV.

3. Voltage on any I/O may not exceed voltage on VDDQ.

Temperature and Thermal Impedance

It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in

Table 6 (page 24), be maintained in order to ensure the junction temperature is in the

proper operating range to meet data sheet specifications. An important step in main-

taining the proper junction temperature is using the device’s thermal impedances cor-

rectly. The thermal impedances are listed in Table 7 (page 25) for the applicable and

available die revision and packages.

Incorrectly using thermal impedances can produce significant errors. Read Micron

technical note TN-00-08, “Thermal Applications” prior to using the thermal impedan-

ces listed in Table 7. For designs that are expected to last several years and require the

flexibility to use several DRAM die shrinks, consider using final target theta values (rath-

er than existing values) to account for increased thermal impedances from the die size

reduction.

The DDR2 SDRAM device’s safe junction temperature range can be maintained when

the TC specification is not exceeded. In applications where the device’s ambient tem-

perature is too high, use of forced air and/or heat sinks may be required in order to sat-

isfy the case temperature specifications.

PDF: 09005aef8565148a

1GbDDR2.pdf – Rev. AA 07/14 EN

23

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2007 Micron Technology, Inc. All rights reserved.

Share Link: