MT47H128M8CF-187EHTR 查看數據表（PDF） - Micron Technology

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MT47H128M8CF-187EHTR

1Gb: x4, x8, x16 DDR2 SDRAM

Micron Technology 

1Gb: x4, x8, x16 DDR2 SDRAM

Power-Down Mode

Figure 75: REFRESH Command-to-Power-Down Entry

CK#

CK

Command

T0

Valid

T1

REFRESH

T2

NOP

T3

tCKE (MIN)

CKE

1 x tCK

Power-down1

entry

Don’t Care

Note: 1. The earliest precharge power-down entry may occur is at T2, which is 1 × tCK after the

REFRESH command. Precharge power-down entry occurs prior to tRFC (MIN) being satis-

fied.

Figure 76: ACTIVATE Command-to-Power-Down Entry

T0

T1

T2

T3

CK#

CK

Command

Valid

ACT

NOP

Address

VALID

tCKE (MIN)

CKE

1 tCK

Power-down1

entry

Don’t Care

Note: 1. The earliest active power-down entry may occur is at T2, which is 1 × tCK after the ACTI-

VATE command. Active power-down entry occurs prior to tRCD (MIN) being satisfied.

PDF: 09005aef8565148a

1GbDDR2.pdf – Rev. AA 07/14 EN

122

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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