MRF5S9101NR1 查看數據表（PDF） - Freescale Semiconductor
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MRF5S9101NR1 Datasheet PDF : 20 Pages
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TYPICAL CHARACTERISTICS - 900 MHz
18
70
17 Gps
60
16
ηD
50
15
40
14
VDD = 26 Vdc
IDQ = 700 mA
30
13
0
12
− 15
IRL
11
− 30
10
− 45
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts CW
19
50
18
45
Gps
17
40
16
35
15
ηD
30
14
VDD = 26 Vdc
IDQ = 700 mA
−8
13
− 12
IRL
12
− 16
11
− 20
10
− 24
860 880 900 920 940 960 980 1000 1020
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts CW
19
IDQ = 1500 mA
18
17 700 mA
16 500 mA
15
1300 mA
1100 mA
900 mA
VDD = 26 Vdc
f = 940 MHz
300 mA
14
1
10
100
1000
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
19
VDD = 12 V
18
17
16
32 V
15
20 V
24 V 28 V
16 V
14
0 20 40 60 80 100 120 140 160 180 200
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Power Gain versus Output Power
MRF5S9101NR1 MRF5S9101NBR1
6
RF Device Data
Freescale Semiconductor
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