MRF5S9101NR1 查看數據表（PDF） - Freescale Semiconductor

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MRF5S9101NR1

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, Pout = 50 W Avg.,

IDQ = 650 mA, 869 - 894 MHz, 920 - 960 MHz EDGE Modulation

Power Gain

Gps

—

18

—

Drain Efficiency

ηD

—

42

—

Error Vector Magnitude

EVM

—

2.3

—

Spectral Regrowth at 400 kHz Offset

SR1

—

- 63

—

Spectral Regrowth at 600 kHz Offset

SR2

—

- 78

—

Unit

dB

%

% rms

dBc

dBc

RF Device Data

Freescale Semiconductor

MRF5S9101NR1 MRF5S9101NBR1

3

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