MRF5S21090LSR3 查看數據表（PDF） - Motorola => Freescale

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产品描述 (功能)

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MRF5S21090LSR3

RF Power Field Effect Transistors

Motorola => Freescale 

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

40

−15

VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz,

35 f2 = 2145 MHz, 2 x W−CDMA, 10 MHz

−20

@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB

30 @ 0.01% Probability (CCDF)

−25

25

η

−30

20

Gps

15

10

IM3

−35

−40

ACPR −45

5

−50

0

1

−55

10

Pout, POWER (WATTS) W−CDMA

Figure 8. 2 - Carrier W - CDMA ACPR, IM3,

Power Gain and Drain Efficiency

versus Output Power

−20

3.84 MHz

−30

Channel BW

−40

−50

−60

−70

−80

−90

−100 −IM3 @

−ACPR @ +ACPR @

3.84 MHz BW 3.84 MHz BW

−110 3.84 MHz BW

−120

−25 −20 −15 −10 −5 0 5 10

+IM3 @

3.84 MHz BW

15 20 25

f, FREQUENCY (MHz)

Figure 9. 2-Carrier W-CDMA Spectrum

100

10

1

0.1

0.01

0.001

0.0001

0

2

4

6

8

10

PEAK−TO−AVERAGE (dB)

Figure 10. CCDF W - CDMA 3GPP, Test Model 1,

64 DPCH, 67% Clipping, Single Carrier Test Signal

109

108

107

106

100

120

140

160

180

200 220

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTBF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTBF factor by ID2 for MTBF in a particular application.

Figure 11. MTBF Factor versus Junction Temperature

MRF5S21090LR3 MRF5S21090LSR3

MOTOROLA RF DEVICE DATA

6

For More Information On This Product,

Go to: www.freescale.com

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