MMG3004NT1(2005) 查看數據表（PDF） - Freescale Semiconductor

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MMG3004NT1
(Rev.:2005)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small - Signal Gain (S21)

Input Return Loss (S11)

Gp

15

16

—

IRL

—

-8

—

Output Return Loss (S22)

ORL

—

- 12

—

Power Output @ 1dB Compression

P1dB

—

27

—

Third Order Output Intercept Point

IP3

—

44

—

Noise Figure

NF

—

3.4

—

Supply Current (1)

IDC

225

250

275

Supply Voltage (1)

VDC

—

5

—

1. For reliable operation, the junction temperature should not exceed 150°C.

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

MMG3004NT1

2

RF Device Data

Freescale Semiconductor

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