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MC79M08BDT 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MC79M08BDT
ONSEMI
ON Semiconductor 
MC79M08BDT Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MC79M00 Series
MC79M15B, C
ELECTRICAL CHARACTERISTICS (VI = 23 V, IO = 350 mA, Tlow to Thigh (Note 8), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
Output Voltage (TJ = 25°C)
Line Regulation, TJ = 25°C (Note 7)
17.5 Vdc VI 30 Vdc
18 Vdc VI 28 Vdc
VO
14.4 15 15.6 Vdc
Regline
mV
5.0
80
3.0
50
Load Regulation, TJ = 25°C (Note 7)
5.0 mA IO 500 mA
Regload
mV
30
240
Output Voltage
17.5 Vdc VI 30 Vdc, 5.0 mA IO 350 mA
VO
Vdc
14.25
15.75
Input Bias Current (TJ = 25°C)
Input Bias Current Change
17.5 Vdc VI 30 Vdc, IO = 350 mA
5.0 mA IO 350 mA, VI = 23 V
IIB
4.4
8.0
mA
DIIB
mA
0.4
0.4
Output Noise Voltage, TA = 25°C, 10 Hz f 100 kHz
Ripple Rejection (f = 120 Hz)
Vn
90
mV
RR
54
60
dB
Dropout Voltage
IO = 500 mA, TJ = 25°C
VIVO
Vdc
1.1
Average Temperature Coefficient of Output Voltage
IO = 5.0 mA, 0°C TJ 125°C
DVO/DT
mV/°C
1.0
7. Load and line regulation are specified at constant temperature. Change in VO due to heating effects must be taken into account separately.
Pulse testing with low duty cycle is used.
8. B = Tlow to Thigh, 40°C < TJ < 125°C
C = Tlow to Thigh, 0°C < TJ < 125°C
100
2.4
Free Air
PD(max) for TA = 50°C
90
Mounted
2.0
Vertically
80
Minimum
70
Size Pad
60
2.0 oz. Copper
L
1.6
ÎÎÎÎÎÎÎÎ L
1.2
ÎÎÎÎÎÎÎÎ0.8
50
0.4
RqJA
40
0
0
5.0
10
15
20
25
30
L, LENGTH OF COPPER (mm)
Figure 1. DPAK3 Thermal Resistance and Maximum
Power Dissipation versus P.C.B. Copper Length
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