KM416C4000B 查看數據表（PDF） - Samsung
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KM416C4000B Datasheet PDF : 35 Pages
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KM416C4000B, KM416C4100B
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
KM416C4000B
Max
-45
100
ICC1
Don′t care
-5
90
-6
80
ICC2
Normal
Don′t care
2
-45
100
ICC3
Don′t care
-5
90
-6
80
-45
70
ICC4
Don′t care
-5
60
-6
50
ICC5
Normal
Don′t care
1
-45
100
ICC6
Don′t care
-5
90
-6
80
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
CMOS DRAM
KM416C4100B
130
120
110
2
130
120
110
80
70
60
1
130
120
110
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
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