KDS135 查看數據表（PDF） - KEC
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KDS135 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
ᴌHigh Reliability.
ᴌSmall surface mounting type (USC).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (10mS)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
* Mounted on a glass epoxy cirvuit board of 20ᴧ20mm
Pad dimension of 4ᴧ4mm
RATING
300
250
300
100
2
150*
150
-55ᴕ150
UNIT
V
V
mA
mA
A
mW
ᴱ
ᴱ
KDS135
SILICON EPITAXIAL PLANAR DIODE
B
G
1
H
2
D
M
M
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A
2.50 +_ 0.1
B
1.25+_ 0.05
C
0.90 +_0.05
D 0.30+0.06/-0.04
E
1.70 +_ 0.05
F
MIN 0.17
G
0.126 +_ 0.03
H
0~0.1
I
1.0 MAX
J
0.15 +_0.05
K
0.4 +_0.05
L
2 +4/-2
M
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
IR(1)
Reverse Current
IR(2)
Total Capacitance
CT
Reverse Recovery Time
trr
TEST CONDITION
IF=100mA
VR=250V
VR=300V
VR=0V, f=1MHz
IR=30mA, IF=30mA
MIN.
-
-
-
-
-
TYP.
1.0
0.04
-
1.35
30
MAX.
1.2
0.2
100
3
100
UNIT
V
ỌA
pF
nS
Marking
Type Name
JA
2001. 6. 11
Revision No : 0
1/2
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