ILX550K 查看數據表（PDF） - Sony Semiconductor
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ILX550K Datasheet PDF : 11 Pages
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ILX550K
Electrooptical Characteristics (Note 1)
(Ta = 25°C, VDD = 12V, fφRS = 1MHz, Input clock = 5Vp-p, Light source = 3200K, IR cut filter CM-500S (t = 1.0mm))
Item
Sensitivity
Sensitivity nonuniformity
Saturation output voltage
Saturation exposure
Dark voltage average
Dark signal nonuniformity
Image lag
Supply current
Total transfer efficiency
Output impedance
Offset level
Red
Green
Blue
Red
Green
Blue
Symbol
RR
RG
RB
PRNU
VSAT
SER
SEG
SEB
VDRK
DSNU
IL
IVDD
TTE
Zo
VOS
Min.
1.8
2.1
1.7
—
2
0.56
0.44
0.57
—
—
—
—
92
—
—
Typ.
2.7
3.3
2.6
4
2.5
0.93
0.76
0.96
2
4
0.02
25
98
450
7.3
Max.
3.6
4.5
3.5
20
—
—
—
—
5
12
—
50
—
—
—
Unit Remarks
V/(lx · s) Note 2
%
Note 3
V
Note 4
lx · s Note 5
mV Note 6
mV Note 6
%
Note 7
mA
%
Ω
V
Note 8
Notes)
1. In accordance with the given electrooptical characteristics, the black level is defined as the average value
of D18, D19 to D67.
2. For the sensitivity test light is applied with a uniform intensity of illumination.
3. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.
VOUT-G = 500mV (Typ.)
PRNU =
(VMAX – VMIN)/2
VAVE
× 100 [%]
Where the 5340 pixels are divided into blocks of 100, the maximum output of each block is set to VMAX, the
minimum output to VMIN and the average output to VAVE.
4. Use below the minimum value of the saturation output voltage.
5. Saturation exposure is defined as follows.
SE =
VSAT
R
Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.
6. Optical signal accumulated time τint stands at 5.5ms.
7. VOUT-G = 500mV (Typ.)
8. Vos is defined as indicated below.
VOUT
VOUT indicates VOUT-R, VOUT-G and VOUT-B.
GND
–3–
VOS ,
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