GS8162Z36B 查看數據表（PDF） - Giga Semiconductor

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GS8162Z36B

18Mb Pipelined and Flow Through Synchronous NBT SRAM

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, ZQ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–1 uA

–1 uA

–100 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

1 uA

100 uA

1 uA

1 uA

1 uA

—

—

0.4 V

Rev: 2.21 11/2004

19/38

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, GSI Technology

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