BT169D-L(2007) 查看數據表（PDF） - NXP Semiconductors.
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BT169D-L Datasheet PDF : 12 Pages
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NXP Semiconductors
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA;
gate open circuit; see Figure 8
IL
latching current
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 10
IH
holding current
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ;
see Figure 11
VT
on-state voltage
IT = 1.2 A
VGT
gate trigger voltage
IT = 10 mA; gate open circuit;
see Figure 7
ID
off-state current
Dynamic characteristics
VD = 12 V
VD = VDRM(max); Tj = 125 °C
VD = VDRM(max); Tj = 125 °C;
RGK = 1 kΩ
dVD/dt
rate of rise of off-state VDM = 0.67 × VDRM(max); Tj = 125 °C;
voltage
exponential waveform; see Figure 12
RGK = 1 kΩ
gate open circuit
tgt
gate-controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA;
time
dIG/dt = 0.1 A/µs
tq
commutated turn-off VDM = 0.67 × VDRM(max); Tj = 125 °C;
time
ITM = 1.6 A; VR = 35 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 2 V/µs;
RGK = 1 kΩ
BT169D-L
Thyristor, logic level
Min
Typ
Max Unit
-
-
50
µA
-
2
6
mA
-
2
5
mA
-
1.25 1.7
V
-
0.5
0.8
V
0.2
0.3
-
V
-
0.05 0.1
mA
500
800
-
-
25
-
-
2
-
-
100
-
V/µs
V/µs
µs
µs
BT169D-L_1
Product data sheet
Rev. 01 — 12 November 2007
© NXP B.V. 2007. All rights reserved.
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