AT26DF081A-SU(2005) 查看數據表（PDF） - Atmel Corporation

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AT26DF081A-SU
(Rev.:2005)

8-megabit 2.7-volt Only Serial Firmware DataFlash® Memory

Atmel Corporation 

Features

• Single 2.7V - 3.6V Supply

• Serial Peripheral Interface (SPI) Compatible

– Supports SPI Modes 0 and 3

• 70 MHz Maximum Clock Frequency

• Flexible, Uniform Erase Architecture

– 4-Kbyte Blocks

– 32-Kbyte Blocks

– 64-Kbyte Blocks

– Full Chip Erase

• Optimized Physical Sectoring for Code Shadowing and Code + Data Storage

Applications

– One 32-Kbyte Top Boot Sector

– Two 8-Kbyte Sectors

– One 16-Kbyte Sector

– Fifteen 64-Kbyte Sectors

• Individual Sector Protection for Program/Erase Protection

• Hardware Controlled Locking of Protected Sectors

• Flexible Programming Options

– Byte/Page Program (1 to 256 Bytes)

– Sequential Program Mode Capability

• JEDEC Standard Manufacturer and Device ID Read Methodology

• Low Power Dissipation

– 7 mA Active Read Current (Typical)

– 11 µA Deep Power-down Current (Typical)

• Endurance: 100,000 Program/Erase Cycles

• Data Retention: 20 Years

• Complies with Full Industrial Temperature Range

• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

– 8-lead SOIC (150-mil and 200-mil wide)

8-megabit

2.7-volt Only

Serial Firmware

DataFlash®

Memory

AT26DF081A

Preliminary

1. Description

The AT26DF081A is a serial interface Flash memory device designed for use in a

wide variety of high-volume consumer-based applications in which program code is

shadowed from Flash memory into embedded or external RAM for execution. The

flexible erase architecture of the AT26DF081A, with its erase granularity as small as

4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional

data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT26DF081A have been opti-

mized to meet the needs of today’s code and data storage applications. By optimizing

the size of the physical sectors and erase blocks, the memory space can be used

much more efficiently. Because certain code modules and data storage segments

must reside by themselves in their own protected sectors, the wasted and unused

memory space that occurs with large sectored and large block erase Flash memory

devices can be greatly reduced. This increased memory space efficiency allows addi-

tional code routines and data storage segments to be added while still maintaining the

same overall device density.

3600A–DFLASH–11/05

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