DGT409BCA(2002) 查看數據表（PDF） - Dynex Semiconductor

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DGT409BCA
(Rev.:2002)

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

DGT409BCA

PACKAGE DETAILS

For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT

SCALE.

2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep (in both electrodes)

Auxiliary cathode

Gate

20˚

Ø51 nom

Ø38 nom

Cathode

Ø38 nom

Ø56.0 max

Ø63 nom

Anode

Nominal weight: 350g

Clamping force: 12kN ±10%

Lead length: 505mm

Package outine type code: CA

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

GTO gate drive units

Recommendations for clamping power semiconductors

Use of V , r on-state characteristic

TO T

Impoved gate drive for GTO series connections

Application Note

Number

AN4506

AN4571

AN4839

AN5001

AN5177

10/11

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